1 motorola igbt device data designer's ? data sheet insulated gate bipolar transistor n?channel enhancement?mode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltage?blocking capability. short circuit rated igbt's are specifi- cally suited for applications requiring a guaranteed short circuit withstand time. fast switching characteristics result in efficient operation at high frequencies. ? industry standard high power to?247 package with isolated mounting hole ? high speed e off : 160 j/a typical at 125 c ? high short circuit capability ? 10 s minimum ? robust high voltage termination maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage v ces 1200 vdc collector?gate voltage (r ge = 1.0 m w ) v cgr 1200 vdc gate?emitter voltage e continuous v ge 20 vdc collector current e continuous @ t c = 25 c e continuous @ t c = 90 c e repetitive pulsed current (1) i c25 i c90 i cm 28 20 56 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 174 1.39 watts w/ c operating and storage junction temperature range t j , t stg ?55 to 150 c short circuit withstand time (v cc = 720 vdc, v ge = 15 vdc, t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case ? igbt e junction to ambient r q jc r q ja 0.7 35 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c mounting torque, 6?32 or m3 screw 10 lbf in (1.13 n m) (1) pulse width is limited by maximum junction temperature. repetitive rating. designer's data for aworst caseo conditions e the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves e representing boundaries on device characteristics e are given to facilitate aworst caseo design. designer's is a trademark of motorola, inc. preferred devices are motorola recommended choices for future use and best overall value. order this document by MGW20N120/d motorola semiconductor technical data MGW20N120 igbt in to?247 20 a @ 90 c 28 a @ 25 c 1200 volts short circuit rated case 340k?01 style 4 to?247ae motorola preferred device g c e c e g ? motorola, inc. 1997 rev 2
MGW20N120 2 motorola igbt device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?to?emitter breakdown voltage (v ge = 0 vdc, i c = 25 m adc) temperature coefficient (positive) v (br)ces 1200 e e 870 e e vdc mv/ c emitter?to?collector breakdown voltage (v ge = 0 vdc, i ec = 100 madc) v (br)ecs 25 e e vdc zero gate voltage collector current (v ce = 1200 vdc, v ge = 0 vdc) (v ce = 1200 vdc, v ge = 0 vdc, t j = 125 c) i ces e e e e 100 2500 m adc gate?body leakage current (v ge = 20 vdc, v ce = 0 vdc) i ges e e 250 nadc on characteristics (1) collector?to?emitter on?state voltage (v ge = 15 vdc, i c = 10 adc) (v ge = 15 vdc, i c = 10 adc, t j = 125 c) (v ge = 15 vdc, i c = 20 adc) v ce(on) e e e 2.42 2.36 2.90 3.54 e 4.99 vdc gate threshold voltage (v ce = v ge , i c = 1.0 madc) threshold temperature coefficient (negative) v ge(th) 4.0 e 6.0 10 8.0 e vdc mv/ c forward transconductance (v ce = 10 vdc, i c = 20 adc) g fe e 12 e mhos dynamic characteristics input capacitance (v 25 vd v 0vd c ies e 1860 e pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 122 e transfer capacitance f = 1 . 0 mhz) c res e 29 e switching characteristics (1) turn?on delay time t d(on) e 88 e ns rise time (v cc = 720 vdc, i c = 20 adc, v 15 vd l 300 h t r e 103 e turn?off delay time ( cc , c , v ge = 15 vdc, l = 300 h r g = 20 w ) t d(off) e 190 e fall time r g = 20 w ) energy losses include atailo t f e 284 e turn?off switching loss e off e 1.65 2.75 mj turn?on delay time t d(on) e 83 e ns rise time (v cc = 720 vdc, i c = 20 adc, v 15 vd l 300 h t r e 107 e turn?off delay time ( cc , c , v ge = 15 vdc, l = 300 h r g = 2 0 w , t j = 12 5 c) t d(off) e 216 e fall time r g = 20 w , t j = 125 c) energy losses include atailo t f e 494 e turn?off switching loss e off e 3.19 e mj gate charge (v 720 vd i 20 ad q t e 62 e nc (v cc = 720 vdc, i c = 20 adc, v ge = 15 vdc ) q 1 e 21 e v g e = 15 vdc) q 2 e 25 e internal package inductance internal emitter inductance (measured from the emitter lead 0.25 from package to emitter bond pad) l e e 13 e nh (1) pulse test: pulse width 300 m s, duty cycle 2%.
MGW20N120 3 motorola igbt device data figure 1. output characteristics figure 2. output characteristics figure 3. transfer characteristics figure 4. collector?to?emitter saturation voltage versus junction temperature typical electrical characteristics figure 5. capacitance variation figure 6. gate?to?emitter voltage versus total charge v ce , collector-to-emitter voltage (volts) c oes 10,000 10 25 20 15 5 0 c, capacitance (pf) 10 t j = 25 c v ge = 0 v c res c ies 100 1000 v ge = 20 v t j = 25 c v ce , collector-to-emitter voltage (volts) i c , collector current (amps) 12.5 v 17.5 v 15 v 10 v 30 20 0 8 4 02 6 40 10 50 60 v ge = 20 v t j = 125 c v ce , collector-to-emitter voltage (volts) i c , collector current (amps) 12.5 v 17.5 v 15 v 10 v 30 20 0 8 4 02 6 40 10 50 60 v ce = 10 v 250 m s pulse width t j = 125 c v ge , gate-to-emitter voltage (volts) i c , collector current (amps) 20 0 15 8 6 510 25 c v ge = 15 v 250 m s pulse width t j , junction temperature ( c) 1 150 50 0 -50 100 v ce , collector-to-emitter voltage (volts) i c = 20 a 40 15 a 12 10 a 2 3 4 60 14 9 71113 q g , total gate charge (nc) 16 8 0 70 20 0 v ge , gate-to-emitter voltage (volts) 4 q t q 1 q 2 t j = 25 c i c = 20 a 60 40 12 14 6 2 10 10 50 30
MGW20N120 4 motorola igbt device data figure 7. reverse biased safe operating area i c , collector current (amps) v ge = 15 v r ge = 20 w t j = 125 c v ce , collector-to-emitter voltage (volts) 100 10 0.1 10,000 1 1 100 10 1000 figure 8. thermal response t, time (s) r(t), normalized effective transient thermal resistance 1.0 0.1 0.01 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.02 d = 0.5 0.05 0.01 single pulse 0.1 0.2
MGW20N120 5 motorola igbt device data package dimensions case 340k?01 to?247ae issue a notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. style 4: pin 1. gate 2. collector 3. emitter 4. collector r p a k v f d g u l e 0.25 (0.010) m tb m 0.25 (0.010) m yq s j h c 4 123 ?t? ?b? ?y? ?q? dim min max min max inches millimeters a 19.7 20.3 0.776 0.799 b 15.3 15.9 0.602 0.626 c 4.7 5.3 0.185 0.209 d 1.0 1.4 0.039 0.055 e 1.27 ref 0.050 ref f 2.0 2.4 0.079 0.094 g 5.5 bsc 0.216 bsc h 2.2 2.6 0.087 0.102 j 0.4 0.8 0.016 0.031 k 14.2 14.8 0.559 0.583 l 5.5 nom 0.217 nom p 3.7 4.3 0.146 0.169 q 3.55 3.65 0.140 0.144 r 5.0 nom 0.197 nom u 5.5 bsc 0.217 bsc v 3.0 3.4 0.118 0.134
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